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AlGaAs/InGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current-voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temper ature, the peak-valley current ratio and the peak voltage are about 4.8 and 0.44 V, respectively. The HEMT is characterized by a gate length of 1 μm, a maximum transconductance of 125mS/mm, and a threshold voltage of-1.0 V. The current-voltage characteristics of the series-connected RTDs are presented. The current-voltage curves of the parallel connection of one RTD and one HEMT are also presented.