氧化锌是直接带隙半导体材料,禁带较宽,激子束缚能很高。本文采用射频磁控溅射制备氧化锌薄膜,并在不同温度下进行退火处理。使用光致发光光谱、X射线衍射等表征氧化锌薄膜发光特性、结晶性质。研究结果表明,退火温度的升高,高温下退火处理能够使氧化锌薄膜更好的发光、再结晶。 Zinc oxide is a direct bandgap semiconductor material with a wide forbidden band and a very high exciton binding energy. In this paper, RF magnetron sputtering was used to prepare zinc oxide thin films and annealed at different temperatures. Photoluminescence spectra and X-ray diffraction were used to characterize the luminescent properties and crystallinity of zinc oxide films. The results show that the annealing temperature, high temperature annealing can make the zinc oxide film better light, recrystallization.