论文部分内容阅读
CMOS阵列探测器中,像素单元间的串扰会影响其成像质量。为了解不同光源对CMOS电串扰的影响,针对CMOS图像传感器的电串扰特性建立了一个分析模型,结合CMOS图像传感器的工作原理定量计算了单色光、宽谱光源入射条件下的电串扰特性。分析结果表明CMOS图像传感器的电串扰随单色光波长、宽谱光源谱宽和中心波长的增大而增大,但中心波长与单色光波长相同的宽谱光源,其对电串扰的影响大于单色光。辐照功率为600μW,单色光波长为1 064 nm,电串扰大小约为50.611 m V;宽谱光源中心波长为1 064 nm,谱宽为400 nm时,电串扰的大小约为50.914 m V,相比于单色光电串扰增加了约0.303 m V。
Crosstalk between pixel cells in CMOS array detectors can affect their imaging quality. In order to understand the influence of different light sources on CMOS electrical crosstalk, an analysis model was built for the electrical crosstalk characteristics of CMOS image sensors. The characteristics of electrical crosstalk under the conditions of monochromatic light and wide-spectrum light source were quantitatively calculated by combining the working principle of CMOS image sensor. The results show that the electrical crosstalk of CMOS image sensor increases with the increase of monochromatic light wavelength and wide spectrum light source width and center wavelength. However, the influence of wide-band light source with the same center wavelength and monochromatic wavelength on electrical crosstalk More than monochromatic light. The irradiation power is 600μW, the wavelength of monochromatic light is 1 064 nm, the electrical crosstalk is about 50.611 mV, the center wavelength of wide-spectrum light source is 1 064 nm and the spectral width is 400 nm, the magnitude of electrical crosstalk is about 50.914 mV , Compared to monochromatic optical crosstalk increased by about 0.303 mV.