对电离辐照损伤后的MOS器件的等温和等时退火特性进行了研究 ,结果发现 ,首先 ,10 0℃等温退火是有效的 ,等时退火所需的全过程时间最短 ;其次 ,+ 5V栅偏压退火相对于 0V和浮空偏置条件 ,阈值电压恢复速度快、恢复程度大 ;最后 ,利用等时退火数据对等温效应进行了理论预估 ,实验等温曲线和预估结果吻合得较好 The isothermal and isothermal annealing characteristics of MOS devices after ionizing radiation damage were studied and found that firstly, the isothermal annealing at 100 ℃ is effective and the whole process time required for isochronal annealing is the shortest. Secondly, the + 5V gate Compared with 0V and floating bias conditions, the bias voltage recovery speed and the recovery degree are large. Finally, the isothermal annealing effect is theoretically predicted by the isothermal annealing data. The experimental isothermal curve is in good agreement with the predicted results