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通过反应磁控溅射过程中的等离子体发射光谱,研究了制备ZnO薄膜的沉积温度、氧气流量比例R=O2(O2+Ar)对Zn和O原子发射光谱的影响,并结合ZnO薄膜的结构和物理性能,探讨了沉积温度在ZnO薄膜生长中的作用.研究结果显示:当R≥0.75%时,Zn的溅射产额随R的增加基本呈线性下降规律.当R介于10%—50%时,氧含量的变化相对平缓,有利于ZnO薄膜生长的稳定性控制.Zn原子发射光谱强度随沉积温度的变化可以分为三个阶段.当沉积温度低于250℃时,发射光谱强度基本保持不变;当沉积温度介于250—550℃时,光谱强度随沉积温度的增加呈线性增加的趋势;当沉积温度大于550℃以后,光谱强度随沉积温度的增加而迅速增加.通过沉积温度的控制可以实现满足或接近化学计量配比的ZnO薄膜的生长,适合高质量ZnO薄膜沉积的温度介于650—800℃,750℃下沉积的ZnO薄膜具有比较低的缺陷密度和明显的室温紫外光致荧光发射.
The influence of the deposition temperature and oxygen flow rate R = O2 (O2 + Ar) on the emission spectra of Zn and O atoms was studied by the plasma emission spectroscopy during reactive magnetron sputtering. Combining the structure of ZnO thin films And the physical properties of ZnO films were investigated.The results show that when R ≥ 0.75%, the sputtering yield of Zn decreases linearly with the increase of R. When R is between 10% 50%, the change of oxygen content is relatively flat, which is conducive to the stability control of ZnO thin film growth.Zn atomic emission spectroscopy intensity with the deposition temperature can be divided into three stages.When the deposition temperature is below 250 ℃, the emission spectral intensity The results show that when the deposition temperature is between 250 and 550 ℃, the spectral intensity tends to increase linearly with the deposition temperature. When the deposition temperature is higher than 550 ℃, the spectral intensity increases rapidly with the deposition temperature. Temperature control can achieve or close to the stoichiometric ZnO thin film growth, suitable for high-quality ZnO film deposition temperature is between 650-800 ℃, 750 ℃ deposited ZnO thin film has a relatively low defect density and significant UV-induced fluorescence emission at room temperature.