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通过对比电特性曲线、阈值电压、亚阈值摆幅等参数的变化趋势,深入分析了低温真空制备的Si Nx介质层非晶铟镓锌氧(a-IGZO)薄膜晶体管(TFT)在光照下的稳定性机理。实验结果表明,器件在光照下的稳定性良好。但如果在施加偏压的过程中同时进行光照,则会伴随有不同程度的电性曲线偏移,具体表现为对正偏压效果的抑制作用和对负偏压效果的促进作用。结合光照在器件的恢复过程中的影响综合分析后认为,光照的主要作用体现在光子对电子空穴对的激发,以及为电子提供能量增加越过势垒的几率。单一的光照影响有限,但在光照与偏压的共同作用下,往往会引起显著的电学性能变化,变化结果符合charge-trapping模型。
By comparing the variation tendency of parameters such as electric characteristic curve, threshold voltage and sub-threshold swing, the effects of low-temperature vacuum deposition on the a-IGZO thin film transistor (TFT) Stability mechanism. Experimental results show that the stability of the device in the light of good. However, if the illumination is applied during the bias application, different levels of electrical curve shifts are accompanied with the suppression effect of the positive bias effect and the promotion effect of the negative bias effect. Combined with the influence of light on the recovery of the device, a comprehensive analysis shows that the main effect of illumination is reflected in the excitation of electron-hole pairs by photons and the probability that electrons will be provided to increase the potential barrier beyond the barrier. A single light has a limited impact, but under the combined action of light and bias, significant changes in electrical properties are often caused, with the result consistent with the charge-trapping model.