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研究了Ga2O3/In2O3膜反应自组装制备GaN薄膜,再将Ga2O3/In2O3膜在高纯氨气气氛中氨化反应得到GaN薄膜,用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电镜(SEM)和透射电镜(TEM)对样品进行结构、形貌的分析。测试结果表明,用此方法得到了六方纤锌矿结构的GaN多晶膜,且900℃时成膜的质量最好。
The Ga 2 O 3 / In 2 O 3 films were self-assembled to prepare GaN films, and then Ga 2 O 3 / In 2 O 3 films were ammoniated in a high purity ammonia atmosphere to obtain GaN films. The films were characterized by XRD, FTIR, Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) of the sample structure and morphology analysis. The test results show that the hexagonal wurtzite GaN polycrystalline film is obtained by this method and the film quality is the best at 900 ℃.