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辐射损伤等效性系数是评价不同中子能谱对样品的实验损伤差异的关键。利用晶体管直流增益的倒数与中子注量呈线性关系这一特点,采用参数一致性好的硅双极晶体管3DG121C作为位移损伤探测器,通过在线监测晶体管直流增益随累积中子注量的变化,分别获得了CFBR-II堆两个特定位置的损伤常数,推导出了不同中子能谱间的辐射损伤等效系数。结果表明,CFBR-II不同位置的辐射损伤没有显著差异。
The equivalent coefficient of radiation damage is the key to evaluate the difference of experimental damage between different neutron spectra. Using the characteristic of the linear relationship between the reciprocal of the DC gain of the transistor and the neutron fluence, the 3DG121C silicon bipolar transistor with good parameter consistency is used as the displacement damage detector. By monitoring the variation of the DC gain of the transistor with the cumulative neutron fluence, The damage constants at two specific positions of the CFBR-II reactor were obtained, respectively, and the equivalent coefficients of radiation damage between different neutron spectra were deduced. The results showed that there was no significant difference in radiation damage at different locations of CFBR-II.