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通过理论分析与计算机模拟 ,给出了以提高跨导为目标的 Si/ Si Ge PMOSFET优化设计方法 ,包括栅材料的选择、沟道层中 Ge组分及其分布曲线的确定、栅氧化层及 Si盖帽层厚度的优化和阈值电压的调节 ,基于此已研制出 Si/ Si Ge PMOSFET器件样品 .测试结果表明 ,当沟道长度为 2μm时 ,Si/ Si Ge PMOS器件的跨导为 45 m S/ mm(30 0 K)和 92 m S/ mm (77K) ,而相同结构的全硅器件跨导则为 33m S/ mm (30 0 K)和 39m S/ m m (77K) .
Through theoretical analysis and computer simulation, the optimized design method of Si / Si Ge PMOSFET with the goal of improving the transconductance is given, including the selection of gate material, the determination of Ge component in the channel layer and its distribution curve, the gate oxide layer and Si cap layer thickness optimization and threshold voltage regulation, based on which Si / SiGe PMOSFET device samples have been developed.The test results show that when the channel length of 2μm, the Si / Si Ge PMOS device transconductance of 45 m S / mm (30 0 K) and 92 m S / mm (77K), while the same structure of all silicon devices transconductance of 33m S / mm (30 0 K) and 39m S / mm (77K).