论文部分内容阅读
概括了宽带隙半导体材料碳化硅的主要特性及生长方法,介绍了其在微电子及光电子领域的应用,并对其发展动态及存在问题进行了简要评述。
The main characteristics and growth methods of SiC in wide bandgap semiconductor materials are summarized. Their applications in microelectronics and optoelectronics are introduced. Their development trends and existing problems are briefly reviewed.