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共振隧穿二极管因其特有的负微分电阻特性,成为一种很有前途的基于能带工程的异质结构量子器件。采用超高真空外延技术,以p型重掺杂硅为衬底生长出以4nm厚Si0.6Ge0.4层为空穴量子阱、以4nm厚Si层为空穴势垒的双势垒单量子阱结构。然后用常规半导体器件工艺制成了空穴型共振隧穿二极管。在室温下对面积为8μm×8μm的共振隧穿二极管进行测量,其峰值电流密度为45.92kA/cm2,电流峰谷比为2.21。根据测量得到的电流电压特性考虑串联电阻的影响,提取出共振隧穿二极管的直流参数。可以利用这些参数将共振隧穿二极管的直流模型加入SPICE电路模拟软件器中进行共振隧穿二极管电路设计。
Resonant tunneling diode has become a promising heterostructure quantum device based on band-pass engineering due to its unique negative differential resistance. Using ultra-high vacuum epitaxy technology, p-type heavily doped silicon as substrate growth to 4nm thick Si0.6Ge0.4 layer hole quantum wells, 4nm thick Si layer as a hole barrier double-barrier single quantum Well structure. A hole-type resonant tunneling diode is then fabricated using conventional semiconductor device technology. Resonant tunneling diodes with an area of 8 μm × 8 μm were measured at room temperature with a peak current density of 45.92 kA / cm 2 and a current peak to valley ratio of 2.21. Based on the measured current-voltage characteristics, the influence of series resistance is considered, and the DC parameters of the resonant tunneling diode are extracted. These parameters can be used to add DC resonant tunneling diode model SPICE circuit simulation software for resonant tunneling diode circuit design.