晶体管和差分对管的一些直流参数的精密测量是十分重要的。对于高精度线性集成电路的研制和生产,需要通过精密测量晶体管的反向漏电流和hFE-Ic的关系曲线,估价器件制造工艺的质量,水平以及新工艺的效果。例如,通过测量氮氢烘焙前后的hFE-Ic曲线。发现这个工艺对于提高小电流下的hFE值是有效的,促进了进一步深入研究氢与悬挂键相结合的物理机理,通过测量采用氮钝化硅化的器件的hFE-Ic曲线,可以估价氮化硅钝化膜的质量;高温氮氢烘焙后,氮化硅钝化膜吸附钠离子的能力增强,也可 The precise measurement of some DC parameters of transistors and differential pairs is very important. For the development and production of high-precision linear integrated circuits, it is necessary to evaluate the quality and level of the device manufacturing process and the effect of the new process by accurately measuring the relationship between the reverse leakage current of the transistor and the hFE-Ic. For example, by measuring the hFE-Ic curve before and after nitrogen-hydrogen baking. It has been found that this process is effective for increasing the hFE at low currents, furthering the physical mechanism of the combination of hydrogen and dangling bonds. By measuring the hFE-Ic curve for devices with nitrogen-passivated siliconization, the silicon nitride Passivation film quality; high-temperature hydrogen-hydrogen baking, silicon nitride passivation membrane ability to adsorb sodium ions can also be