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文章基于CMOS 0.18μm工艺,在Hspice下,对四种MOS管基准电压源进行了分析和仿真,文中给出了每种电路仿真时的电路参数和仿真结果。
Based on the CMOS 0.18μm process, under the Hspice, the four kinds of MOS tube reference voltage source are analyzed and simulated. The circuit parameters and simulation results of each circuit simulation are given.