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根据剥离霍尔技术的物理基础，分析了范德堡测试结构中薄膜材料在逐层测量时F因子发生变化的可能原因，主要归因于被测样品存在导电层厚度和电阻率不均匀性所致。而实验表明，采用阳极氧化技术控制膜厚的不均匀性可小于10％，因此导致F因子变化的主因是ρ（x，y）和θH（x，y）的存在。实验分析了F因子随深度的改变对纵向分布测量结果的影响，指出，当F因子随深度改变时，分析结果应该镇用；在作剥离霍尔测量时加测F因子是必要的，以作为利用分析结果的参考。
According to the physical basis of peeling Hall technology, the possible reasons for the change of F factor in the measurement of the film material in Vanderbilt test structure are analyzed, which is mainly attributed to the existence of conductive layer thickness and resistivity nonuniformity To Experiments show that the anodic oxidation technique can control the nonuniformity of the film thickness less than 10%, so the main factors leading to the change of F factor are the existence of ρ (x, y) and θH (x, y). The influence of depth of F factor on the measurement results of longitudinal distribution is analyzed experimentally. It is pointed out that when F factor changes with depth, the analysis result should be used in town. It is necessary to add F factor when making peeloff measurement. Use of the results of the reference.