本文通过实验和理论分析指出了三极管饱和时“发射结、集电结都正偏”的说法的欠妥处，并指出此时三极管集电结弱反偏或正偏，且集电结弱反偏的情况更常见． In this paper, we point out the defects of “the emitter junction and the junction junction are both biased” when the transistor is saturated through experiments and theoretical analysis. It is pointed out that the junction of the transistor is weakly biased or forward biased and the collector junction is weak Partial bias is more common.