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研究了利用朗缪尔技术(LB)生长在柔性基底上的聚偏氟乙烯和三氟乙烯的共聚物(P(VDF-TrFE))薄膜的电学性质.通过测量相对介电常数和热释电系数,发现薄膜在室温1kHz时的优值因子达到1.4 Pa-1/2.这表明利用LB技术生长的P(VDF-TrFE)薄膜是热释电探测器的优良候选材料.优值因子的提高可能来源于LB薄膜的良好结晶性和分子链在平面内的高度有序性.
The electrical properties of poly (vinylidene fluoride) and trifluoroethylene copolymer (P (VDF-TrFE)) thin films grown on flexible substrates by Langmuir technique (LB) were studied. By measuring the relative permittivity and pyroelectric Coefficient and found that the film has a merit factor of 1.4 Pa-1/2 at 1 kHz at room temperature, indicating that the P (VDF-TrFE) film grown by the LB technique is an excellent candidate for a pyroelectric detector. It may be derived from the good crystallinity of the LB film and the high orderliness of the molecular chains in the plane.