论文部分内容阅读
报道了一种可用于并行光传输系统的64×64光探测器面阵。器件结构采用谐振腔增强型(RCE),吸收区由3层InGaAs/GaAs量子阱构成,谐振腔是由2组多层布拉格结构的反射镜组成,工作波长位于980nm。该器件利用倒装焊技术,将GaAs基的谐振腔增强型光探测器面阵与相应的Si基标准CMOS集成电路混合集成在一起,形成具备64×64路光并行接收及处理的大规模光电集成探测器面阵器件,并对光探测器面阵的主要特性进行了测试,测试结果显示该面阵具有均匀的电特性,反向偏压均大于14V,暗电流约为10nA数量级。
A 64 × 64 array of photodetectors that can be used in parallel optical transmission systems is reported. The structure of the device is based on a resonant cavity enhancement (RCE), the absorption region consists of three layers of InGaAs / GaAs quantum wells, and the resonator consists of two groups of multilayer Bragg-structured mirrors with a working wavelength of 980 nm. The device uses flip-chip technology, the GaAs-based cavity-enhanced photodetector array and the corresponding Si-based standard CMOS integrated circuit integrated together to form a 64 × 64-way optical parallel reception and processing of large-scale photovoltaic The detector array device is integrated and the main characteristics of the array of photodetectors are tested. The test results show that the array has uniform electrical characteristics, the reverse bias voltage is greater than 14V, and the dark current is about 10nA.