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目前,硅光子集成在光通信和信号处理、微电子系统的片内和片间互连领域成为研究热点。虽然其基础元件如波导、输入/输出(I/O)耦合器、波分复用器、调制器和光探测器性能达到了一定水平,但是硅光子集成回路仍面临挑战,原因是硅基激光光源的制作仍然是一个技术难题。综述了近年来硅基混合集成激光器的进展,介绍了课题组的研究成果。将微结构引入到硅基混合集成硅波导输出激光器中,提出了新型的III-V/硅混合集成的微结构硅波导输出单模激光器。此新型激光器工作在通信波段。其中,InGaAlAs增益结构是通过晶片直接键合的方式与具有微结构的SOI(Si/SiO2/Si)集成。激光器模式选择机制是基于SOI中的周期微结构,仅通过标准光刻即可实现。微结构激光器室温连续输出为0.85mW,脉冲输出为3.5mW,边模抑制比为25dB。
At present, silicon photonics is integrated into the fields of optical communication and signal processing, on-chip and inter-chip interconnection of microelectronic systems. Although the performance of its basic components such as waveguides, I / O couplers, wavelength division multiplexers, modulators and photodetectors has reached a certain level, silicon photonics integrated circuits are still challenged because of silicon-based laser light sources The production is still a technical problem. The progress of silicon-based hybrid integrated lasers in recent years is reviewed, and the research results of the research group are introduced. The microstructure was introduced into the silicon-based hybrid integrated silicon waveguide output laser, and a new type of III-V / silicon hybrid integrated microstructure silicon waveguide output single-mode laser was proposed. This new laser works in the communication band. The InGaAlAs gain structure is integrated with SOI (Si / SiO2 / Si) having a microstructure through direct bond of the wafer. The laser mode selection mechanism is based on periodic microstructures in SOI and can be achieved only by standard lithography. The microstructured laser has a continuous output of 0.85 mW at room temperature, a pulse output of 3.5 mW and a side mode suppression ratio of 25 dB.