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采用金属有机物化学气相沉积,在2英寸(1英寸=2.54 cm)蓝宝石图形衬底上通过引入变温量子阱生长技术,生长出了具有三角形量子阱(TQW)结构的发光二极管外延片。对比不同生长温度下的样品,得出了最优化的具有三角形量子阱结构外延片的生长条件。通过比较常规恒温量子阱结构和三角形量子阱结构外延片的光致发光光谱,发现TQW结构具有更窄的半峰宽和更高的发光强度。这主要是由于TQW改变了量子阱中的波函数分布,使电子空穴对的复合效率提高。外量子效率从传统的59.38%提高到60.75%,比传统的恒温量子阱提高了1.38%。
The epitaxial wafers with triangular quantum wells (TQW) structure were grown by metal - organic chemical vapor deposition (CVD) on a 2 inch (1 inch = 2.54 cm) sapphire substrate by introducing a temperature - programmed quantum well growth technique. Comparing the samples at different growth temperatures, the optimal growth conditions for the epitaxial wafer with triangular quantum well structure were obtained. By comparing the photoluminescence spectra of the conventional constant temperature quantum well structure and the triangular quantum well structure epitaxial wafer, it is found that the TQW structure has a narrower half-peak width and a higher luminescence intensity. This is mainly due to the fact that TQW changes the distribution of the wave functions in the quantum well and improves the recombination efficiency of electron-hole pairs. The external quantum efficiency increased from 59.38% to 60.75%, which is 1.38% higher than the traditional constant temperature quantum well.