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用ＩＣＢ外延技术在ＮａＣｌ（１００）和Ｓｉ（１１１）衬底上生长了ＣｄＴｅ单晶薄膜．Ｘ光衍射、电子背散射通道及ＲＨＥＥＤ都表明获得了良好的单晶结构及平滑膜面．外延取向关系为ＣｄＴｅ（１００）／ＮａＣｌ（１００）和ＣｄＴｅ（１１１）／Ｓｉ（１１１）．实验发现，生长温度小于２３０℃时，外延膜呈闪锌矿（立方）和钎锌矿（六方）的混合相结构．薄膜生长体现出团粒束淀积的规律，即随着团粒能量的增大，ＣｄＴｅ外延膜的结晶质量显著提高．在Ｓｉ衬底上，外延得到的最好的ＣｄＴｅ膜，其双晶衍射摆动曲线半高宽为１１弧分左右．
CdTe single crystal films were grown on NaCl (100) and Si (111) substrates by ICB epitaxy. X-ray diffraction, electron backscatter channels and RHEED all showed good single crystal structure and smooth film surface. The epitaxial orientation relationship is CdTe (100) / NaCl (100) and CdTe (111) / Si (111). The experimental results show that the epitaxial film is a mixed phase structure of sphalerite (cubic) and wurtzite (hexagonal) when the growth temperature is less than 230 ℃. The film growth reflects the rule of the deposition of agglomerate, that is, with the increase of the energy of the agglomerate, the crystalline quality of the CdTe epitaxial film increases significantly. On the Si substrate, the best epitaxial CdTe film has a full width at half maximum of about 11 arcmin.