Ternary AlMgB thin films were synthesized on silicon (100) substrate at 573 K by radio frequency (RF) magnetron sputtering method using one Al/Mg co-target and
PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buff
A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of