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利用低温光荧光谱研究了自由电子激光辐照对GaAs/AlGaAs多量子阱光学性质的影响。用波长为 8 92μm ,光功率密度相应于电场强度为 2 0kV/cm的自由电子激光辐照多量子阱 6 0min ,发现量子阱特征峰 797nm经过辐照后峰值发生红移至 812nm ,波形展宽 ,峰高降低。对此结果进行了讨论 ,并与电子辐照的情况做了比较。
The effect of free electron laser irradiation on the optical properties of GaAs / AlGaAs MQWs has been studied by low temperature photoluminescence spectroscopy. With a wavelength of 892μm, the optical power density corresponding to electric field strength of 20kV / cm free electron laser irradiation of a multi quantum well 6 0min and found that the characteristic peak of the quantum well 797nm after irradiation red shift to 812nm peak broadening, Peak height decreases. The results were discussed and compared with the electron irradiation.