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随着MEMS技术的飞速发展,可靠性问题逐渐成为MEMS器件在军事和商业中应用的重要阻碍。结合器件的工作环境,分别从高温、高温高湿、温度冲击、过电压、压力过载、温湿循环等环境负载方面探讨硅压阻式MEMS压力传感器的工艺可靠性问题。试验结果表明,环境负载后,圆片级器件特性参数基本无变化,而封装级器件特性参数有不同程度的漂移。参照工厂制定的工艺标准(<10%),封装级器件测试数据可以有效监控MEM产品的工艺质量。
With the rapid development of MEMS technology, reliability has gradually become an important obstacle to the application of MEMS devices in military and commercial applications. Combined with the work environment of the device, the process reliability of the silicon piezoresistive MEMS pressure sensor was discussed respectively from the aspects of high temperature, high temperature and high humidity, temperature shock, over voltage, pressure overload, temperature and humidity cycling and other environmental loads. The experimental results show that after the environmental load, the characteristic parameters of the wafer-level devices have almost no change, while the package-level device characteristic parameters have different degrees of drift. With reference to factory-established process standards (<10%), package-level device test data effectively monitors the quality of the MEM product.