为打破国外技术垄断,该项目作为“极大规模集成电路制造装备及成套工艺”国家科技重大专项立项项目之一,提出了开发0.13微米嵌入式闪存技术,发展国产SIM卡产业的方案。项目主要开发了0.13微米多个技术节点的嵌入式自对准分栅闪存技术与工艺,包括多代不断微缩的闪存和标准逻辑器 In order to break the monopoly of foreign technology, this project is proposed as one of the project of “National Large and Large Scale Integrated Circuit Manufacturing Equipment and Complete Technology” major project of national science and technology. It proposes a scheme of developing 0.13 micron embedded flash memory technology and developing the domestic SIM card industry. The project mainly develops embedded self-aligned split-gate flash memory technology and technology with multiple technology nodes of 0.13 micron, including multiple generations of ever-shrinking flash memory and standard logic