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本文基于对MOS结构耗尽-弱反型区C-V特性的理论分析,提出了一种利用高频C-V特性直接测量半导体表面势和界面陷阱密度及其按能量分布的简便方法,减少了测量分析的计算量,降低了对样品的要求。本文还给出了一些实验样品的测试结果。
Based on the theoretical analysis of the CV characteristics of MOS depletion-weak inversion region, this paper presents a simple and convenient method to measure the surface potential and interface trap density of semiconductor and its distribution by energy by using high-frequency CV characteristics, The amount of calculation reduces the sample requirements. This paper also gives the test results of some experimental samples.