柏林工业大学的研究者报导由分子束外延生长的解理 C- Ga N样品观测到光激励受激辐射。从解理C- Ga N层激发的阈值强度低于用金属有机化学蒸气淀积生长的 C- Ga N。这种材料可望用作解理腔蓝光激光二极管。由于 C- Ga N层与 Ga As共用解理面 ,设想用此解理面做激光腔。用解理氮 Researchers at the Technical University of Berlin reported that photo-stimulated stimulated emission was observed by cleaved C-Ga N samples grown by molecular beam epitaxy. The threshold intensity of excitation from the cleaved C-Ga N layer is lower than that of C-Ga N grown by metal-organic chemical vapor deposition. This material is expected to be used as a cleaved cavity blue laser diode. Since the C-Ga N layer shares the cleavage plane with Ga As, it is envisioned to use this cleavage plane as a laser cavity. Use cleavage of nitrogen