真空蒸发在载玻片上沉积CuInS2薄膜(Cu、In、S原子配比为1:0.1:1.2)。摸索CuInS2薄膜发生导电类型转换最有效的热处理条件,研究不同热处理工艺对CuInS2薄膜的结构、表面形貌、化学成分比和光学性能的影响。实验给出:沉积的薄膜进行360℃热处理30 min后,得到黄铜矿结构的CuInS2薄膜;SEM分析显示薄膜表面呈颗粒状较平整致密性略差,导电类型为N型,薄膜的本征吸收限为1.46eV,直接光学带隙Eg=1.38 eV。对薄膜进行370℃热处理20 min同样可得到N型CuInS2但含有少量的CuS2成分,薄膜表面致密性变好但粗糙度增大,本征吸收限发生红移为1.42 eV,Eg=1.40 eV。370℃,30 min热处理后可得到P型CuInS2薄膜,Eg=1.37 eV。制备的三种CuInS2薄膜的光吸收系数都在104cm-1数量级以上。CuInS2薄膜中In或Cu元素含量大小,对薄膜的导电类型的变化起着决定性的作用,而薄膜中S和In元素的变化直接取决于热处理的条件。 CuInS2 thin films were deposited on glass slides by vacuum evaporation (Cu, In, S atomic ratio of 1: 0.1: 1.2). The most effective heat treatment conditions for CuInS2 thin films were investigated. The effects of different heat treatments on the structure, surface morphology, chemical composition ratio and optical properties of CuInS2 thin films were investigated. The experimental results show that the deposited film is annealed at 360 ℃ for 30 min, and the CuInS2 thin film with chalcopyrite structure is obtained. The SEM analysis shows that the surface of the film is slightly worse than the flat and compact, the conductivity type is N, and the intrinsic absorption Limited to 1.46 eV, direct optical bandgap Eg = 1.38 eV. When the film was heat-treated at 370 ℃ for 20 min, N-type CuInS2 was also obtained but a small amount of CuS2 was contained. The surface density of the film was improved but the roughness increased. The intrinsic absorption limit was shifted to 1.42 eV and Eg = 1.40 eV. P-type CuInS2 films were obtained after heat treatment at 370 ℃ for 30 min, Eg = 1.37 eV. The prepared three kinds of CuInS2 films have the light absorption coefficient of more than 104cm-1. The content of In or Cu in CuInS2 film plays a decisive role in the change of the conductivity type of the film, and the change of S and In elements in the film directly depends on the heat treatment conditions.