论文部分内容阅读
利用脉冲激光入射技术研究100级0.18μm部分耗尽绝缘体上硅互补金属氧化物半导体反相器链的单粒子瞬态效应,分析了激光入射器件类型及入射位置对单粒子瞬态脉冲传输特性的影响.实验结果表明,单粒子瞬态脉冲在反相器链中的传输与激光入射位置有关,当激光入射第100级到第2级的n型金属-氧化物-半导体器件,得到的脉冲宽度从287.4 ps增加到427.5 ps;当激光入射第99级到第1级的p型金属-氧化物-半导体器件,得到的脉冲宽度从150.5 ps增加到295.9 ps.激光入射点靠近输出则得到的瞬态波形窄;靠近输入则得到的瞬态波形较宽,单粒子瞬态脉冲随着反相器链的传输而展宽.入射器件的类型对单粒子瞬态脉冲展宽无影响.通过理论分析得到,部分耗尽绝缘体上硅器件浮体效应导致的阈值电压迟滞是反相器链单粒子瞬态脉冲展宽的主要原因.而示波器观察到的与预期结果幅值相反的正输出脉冲,是输出节点电容充放电的结果.
The single-event transient effects of 100-stage 0.18μm partially depleted silicon-on-insulator (SOI) CMOS inverter chains were investigated by using pulsed laser incidence technique. The effects of laser incident device type and incident location on single-particle transient pulse transmission characteristics The experimental results show that the transmission of the single-event transient pulse in the inverter chain is related to the laser incident position. When the laser beam is incident on the n-type metal-oxide semiconductor device from the 100th stage to the 2th stage, the pulse width From 287.4 ps to 427.5 ps; the resulting pulse width increases from 150.5 ps to 295.9 ps as the laser enters the p-type metal-oxide semiconductor device from stage 99 to stage 1. The instant the laser is incident near the output State waveform is narrower; the transient waveform obtained near the input is wider, and the single-event transient pulse broadens with the transmission of the inverter chain.The type of incident device has no effect on the transient pulse broadening of the single particle.Through theoretical analysis, The threshold voltage hysteresis caused by the floating body effect of the partially depleted silicon-on-insulator device is the main reason for the transient pulse broadening of the single-phase inverter chains, while the amplitude observed with the oscilloscope The positive output pulse, the result of charging and discharging the output node capacitance.