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本文提出一种改变SiO_2表面特性的新方法.当用一定能量的电子轰击二氧化硅表面时,二氧化硅的腐蚀特性发生了很大变化.在同一工艺条件下,未经电子轰击的二氧化硅腐蚀速率为700—1000A/分,经电子轰击的二氧化硅腐蚀速率近于零.
In this paper, a new method to change the surface properties of SiO 2 is proposed. When a certain amount of energy is used to bombard the surface of silica, the corrosion behavior of SiO 2 changes greatly. Under the same process conditions, Silicon corrosion rate of 700-1000A / min, the electron bombardment of silica corrosion rate is near zero.