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本文从菲涅尔衍射模型出发,在部分相干条件下对集成电路制造工艺所常用的光刻法的原理性限制作了研究。对于接触法光刻技术,本文给出了选择合理间隙的判据。关于投影光刻技术,通过直边衍射理论的计算和实验,得到照明相干度和调焦方式对边缘锐度的影响;发现目视调焦与光电瞄准两者在几何位置上的差别。这些结果也可适用于电子束光刻技术,从而有助于大规模集成电路的研制。
Based on the Fresnel diffraction model, the principle limitations of lithography, which are commonly used in integrated circuit manufacturing processes, are studied under partially coherent conditions. For the contact lithography, this paper gives the criteria for choosing a reasonable gap. With respect to the projection lithography technique, the influence of the illumination coherency and the focusing method on the edge sharpness is obtained through the calculation and experiment of the straight edge diffraction theory. The difference between the geometric focus of the visual focusing and the photoelectric sighting is found out. These results can also be applied to electron beam lithography, thus contributing to the development of large scale integrated circuits.