利用电子束蒸发在硅片上制成了二氧化钛电容器。二氧化钛膜的厚度范围从500A到2000A。在1000℃温度下,于干氧中淀积后氧化(Postdeposion)有利于促进薄膜的化学配比向金红石状态转变。已获得大于2pf/密耳的电容密度(介电常数4～40)。由于氧化时间长,氧气通过TiO_2膜扩散,导致在TiO_2的下面生长起大量的二氧化硅;与此同时,钛也向硅中扩散,结果形成一个n—型扩散。对于好的器件而言,得到的禁带中央的表面态密度为10~(11)～5×10~(11)cm~(-2) ev~(-1)。氧化时间较长时,电容较小,漏电流和表面态密度也较低。 Titanium dioxide capacitors were fabricated on silicon using electron beam evaporation. Titanium dioxide films range in thickness from 500A to 2000A. Post Deposition at a temperature of 1000 ° C facilitates the conversion of the stoichiometric ratio of the film to rutile. Capacitance greater than 2 pf / mil has been achieved (dielectric constant 4 to 40). Due to the long oxidation time, oxygen diffuses through the TiO 2 film, resulting in the growth of large amounts of silica underneath TiO 2; meanwhile, titanium also diffuses into the silicon, resulting in an n-type diffusion. For a good device, the surface state density at the center of the forbidden band is 10 ~ (11) ~ 5 × 10 ~ (11) cm ~ (-2) ev ~ (-1). When the oxidation time is longer, the capacitance is smaller, the leakage current and the surface state density are also lower.