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用实验方法对一种两维电子气电荷耦合器件(2 DEG CCD)的二相工作器件结构进行了首次演示,在26 MHz时,该结构呈现出的电荷转移效率(CTE)超过了0.999。Al_(0.3)Ga_(0.7)As/GaAs调制掺杂异质结构利用一种带凹槽的金属陶瓷栅极实现了二相操作。该结构可以与未来轨道成象系统中使用的单片集成高级Ⅲ-Ⅴ族红外探测器相兼容。
A two-phase working device structure of a two-dimensional electron gas-to-charge coupled device (2 DEG CCD) was demonstrated experimentally for the first time and exhibited a CTE of over 0.999 at 26 MHz. Al_ (0.3) Ga_ (0.7) As / GaAs Doped Doping Heterostructures Two-phase operation was achieved with a grooved cermet gate. The structure is compatible with monolithically integrated, advanced III-V family infrared detectors used in future orbital imaging systems.