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采用低压化学汽相沉积 (LPCVD)方法 ,依靠纯SiH4 气体分子的表面热分解反应 ,在由Si—O—Si键和由Si—OH键终端的两种SiO2 表面上 ,自组织生长了Si纳米量子点 .实验研究了所形成的Si纳米量子点密度随SiO2 表面的反应活性位置数、沉积温度以及反应气压的变化关系 .依据LPCVD的表面热力学过程 ,定性地分析了Si纳米量子点的形成机理 .研究结果对具有密度分布均匀和晶粒尺寸可控的Si纳米量子点的自组织生长 ,以及Si基新型量子电子器件的制备具有重要的实际意义 .
Low-pressure chemical vapor deposition (LPCVD) method relies on the surface thermal decomposition reaction of pure SiH4 gas molecules to self-organize Si nanostructures on both SiO2 surfaces terminated by Si-O-Si bonds and Si-OH bonds Quantum dots.The relationship between the density of Si nanoparticles and the reactive sites, the deposition temperature and the reaction pressure were experimentally studied.According to the surface thermodynamic process of LPCVD, the formation mechanism of Si nano quantum dots The research results have important practical significance for the self - organized growth of Si nano - quantum dots with uniform density distribution and controllable grain size, as well as the preparation of novel Si - based quantum electronic devices.