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Si外延片是制造半导体器件和集成电路最常用的半导体材料。外延层电阻率是外延片最重要的参数之一,它直接影响器件的性能。简要分析了自动汞探针C-V测试仪测量电阻率前进行表面处理的原因,研究了不同的表面处理方法对电阻率测试结果的影响,发现对于外延层的电阻率ρ>1Ω.cm的n型Si外延片,采用紫外光(UV)表面处理是一种合适的表面处理方法,该方法应用于实际生产测试过程。
Si epitaxial wafers are the most commonly used semiconductor materials for manufacturing semiconductor devices and integrated circuits. Epitaxial layer resistivity is one of the most important parameters of epitaxial wafers, which directly affect the performance of the device. The reason of the surface treatment before measuring the resistivity of the automatic mercury probe CV tester is briefly analyzed. The influence of different surface treatment methods on the resistivity test results is also analyzed. It is found that for the n-type Si epitaxial wafers, the use of UV (UV) surface treatment is a suitable surface treatment method, the method used in the actual production test process.