一、引言 近十年来,各种干法刻蚀工艺在VLSI制造中得到了广泛应用;但是,由于其中涉及的物理和化学因素十分复杂,因此,对刻蚀性能的研究和有关工艺优化工作仅停留在表面阶段。 下面介绍一种反应离子刻蚀(RIE)速率的模型建立方法。它避开了目前尚未认识的刻蚀机理,从实用出发,以统计数学为基础,通过较少的实验次数,获取较多的信息。 I. INTRODUCTION In the past ten years, various dry etching processes have been widely used in VLSI manufacturing. However, due to the complexity of the physical and chemical factors involved, the research on etching performance and related process optimization work Stay on the surface stage. The following describes a model of reactive ion etching (RIE) rates. It avoids the etching mechanism not yet known, from the practical, statistical-based, with fewer experiments for more information.