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5. Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

来源 :中国科学：数学英文版 | 被引量 : 0次 | 上传用户：wuyikun2

【摘 要】

：

This paper reported the effect of the weak damage in the Al0.25Ga0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1×1

【作 者】

：

LIU Pijun 

【机 构】

：

1.DepartmentofPhysics

【出 处】

：

中国科学：数学英文版

【发表日期】

：

2001年12期

【关键词】

：

离子培植 做 拉曼光谱学 RBS/C 测量 格子紧张 ion implantation doping Raman spectroscopy RBS/C meas 

【基金项目】

：

国家自然科学基金

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This paper reported the effect of the weak damage in the Al0.25Ga0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1×1014 to 5×1015 cm-2. The Raman spectra measured on these samples showed that there were two

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