扫描电子显微镜可对固体样品进行形貌观察、微区成份分析、晶体结构分析,这已为人们所熟知。然而在微区光、电、磁特性分析方面它还有巨大潜力。发掘这种潜力可以得到发光晶体微区光电特性、晶体完整性及能带结构的信息。 1.GaAlAs发光二极管微区光电特性的分析 p—n结或其他形式的势垒,是一切半导体结型器件的核心,在结型器件中又以异质结 Scanning electron microscopy of solid samples can be observed morphology, micro-composition analysis, the crystal structure analysis, which is well known. However, it has great potential in optical, electrical and magnetic properties analysis. Exploiting this potential can yield information on the optoelectronic properties, crystal integrity, and band structure of luminescent crystal domains. 1.GaAlAs light-emitting diode micro-optical properties of the analysis p-n junction or other forms of barrier, is the core of all semiconductor junction devices, in the junction device with heterojunction