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研究了衬底温度、核化密度、衬底表面预处理等工艺参数对微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石的影响。采用扫描电镜、X-射线衍射、喇曼光谱和红外光谱对样品进行了表征。结果表明:从高核化密度生长的金刚石膜中探测不到碳化硅;不论对硅衬底进行抛光预处理还是未抛光预处理,从低核化密度生长的金刚石厚膜中总能探测到碳化硅。碳化硅生长在硅衬底上未被金刚石覆盖的地方,或者是在金刚石晶核之间的空洞处。碳化硅形成和金刚石生长是同时发生的两个竞争过程。此研究结果为制备金刚石和碳化硅复合材料提供了一种新的方法。
The effects of substrate temperature, nucleation density and substrate surface pretreatment on the simultaneous growth of silicon carbide and diamond on a silicon wafer by microwave plasma chemical vapor deposition were investigated. The samples were characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and infrared spectroscopy. The results show that no silicon carbide can be detected from the diamond nuclei grown at high nucleation density. Carbonization can always be detected from the diamond thick film with low nucleation density, regardless of whether the silicon substrate is polished or unpolished silicon. Silicon carbide is grown on the silicon substrate where it is not covered by diamond or at the void between the diamond nuclei. Silicon carbide formation and diamond growth are two competing processes that occur simultaneously. The results of this study provide a new method for preparing diamond and silicon carbide composites.