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在中波响应波段的p型Hg0 70 9Cd0 2 91 Te(MCT)分子束外延生长薄膜上 ,利用材料芯片技术获得叠加注入不同硼离子剂量的系列大光敏元面积 (5 0 0 μm× 5 0 0 μm)的n_op_p结 .通过测量液氮温度下不同离子注入剂量单元的电流 电压特性和对零偏微分电阻R0 分析 ,观测到p_n结的性能与硼离子注入剂量明显的依赖关系 .在另一片薄膜材料(镉组分值为 0 2 74 3)上通过该方法获得R0 A优于现有常规数值的探测器单元
On the p-type Hg0 70 9Cd0 2 91 Te (MCT) molecular beam epitaxial growth film in medium-wave response wavelength range, a series of large photosensitized elements (500 μm × 500) μm) .The n_op_p junction was measured by measuring the current-voltage characteristics of different ion implantation dose units at liquid nitrogen temperature and analyzing the zero bias partial resistance R0.The dependence of the performance of p_n junction on boron ion implantation dosage was observed.Another film Material (cadmium component value of 0 2 74 3) obtained by this method R0 A better than the conventional value of the detector unit