论文部分内容阅读
SiC材料的质量对于SiC器件的制备和性能具有非常重要的意义,高质量的SiC单晶是制备优良功率器件的基础本文在此背景下综述了国际上碳化硅单晶生长以及同质外延技术发展的历史与现状。介绍了温度场以及工艺对于单晶材料质量的影响。并对制备4H-或6H-SiC同质外延薄膜的机理,方法和特性做了系统的理论分析。
The quality of SiC material is very important for the preparation and properties of SiC devices. High quality SiC single crystal is the basis for the preparation of excellent power devices. In this context, the international development of SiC single crystal growth and homoepitaxial growth History and current situation. The effects of temperature field and process on the quality of single crystal materials are introduced. The mechanism, method and properties of 4H- or 6H-SiC homoepitaxial films were systematically and theoretically analyzed.