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研究用含10％—25％锆的硅溶体浸渍МПГ级致密石墨。由于孔内物资移动的机理不同,浸渍可以分为两个级段。 在开始级段(0—50秒)浸渍的深度取于时间的平方定律。试验曲线的第二部分在L-T1/4座标上变直了，这证实了在表面扩散级段中原子是沿石墨气孔运动的。
It has been studied to impregnate МПГ-grade dense graphite with a silicon solution containing 10% -25% zirconium. Due to the mechanism of material movement in the hole is different, impregnation can be divided into two stages. The depth of dip at the beginning of the stage (0-50 seconds) is taken from the square of the law of time. The second part of the experimental curve straightened at the L-T1 / 4 coordinate, confirming that the atoms move along the graphite pores during the surface diffusion stage.