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砷化镓材料中缺陷的不均匀分布严重地限制了集成电路生产的重复性。本文首次提出一种利用傅里叶变换频谱图象检测和分析沿<110>和<010>方向上位错缺陷的统计分布的方法,称为FTIT检验法。文中定义的相参系数α和纹理复杂系数β是定量地检验制造集成电路材料中缺陷的重要指标。
The uneven distribution of defects in gallium arsenide materials severely limits the reproducibility of integrated circuit manufacturing. This paper presents for the first time a method of detecting and analyzing the statistical distribution of dislocation defects in <110> and <010> directions by using Fourier transform spectral images, which is called FTIT test. The co-parameter α and the complex texture coefficient β defined in this paper are important indexes for quantitatively testing the defects in the fabrication of integrated circuit materials.