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采用脉冲准分子激光大面积扫描沉积技术 ,在透明导电玻璃 (ITO)及Si(1 1 1 )单晶基片上沉积了尺寸达 4× 4cm2 ,具有高c轴 (0 0 1 )取向生长的V2 O5薄膜。采用X射线衍射 (XRD)、拉曼光谱 (RS)、傅里叶红外光谱 (FT IR)对沉积及不同温度下退火处理的样品结构和光谱特性进行了研究。
Using a pulsed excimer laser scanning deposition technique, V2 with a size of 4 × 4cm2 and high c-axis (001) orientation was deposited on the transparent conductive glass (ITO) and Si (111) O5 film. The structure and spectral characteristics of samples annealed at different temperatures were studied by X-ray diffraction (XRD), Raman spectroscopy (RS) and Fourier transform infrared spectroscopy (FT IR).