具有金属 /绝缘层 /半导体 /金属结构的场助热电子发射阴极是大屏幕显示器中的主要候选部件。电子发射受到各层薄膜的厚度、材料组分和结晶状态等的严重影响。由Au/Ag双层薄膜构成的上电极使得电子亲和势降低0 .5 e V,发射电流提高了数倍。半导体材料 Zn1 - x Mgx O具有低的电子亲和势以及适合电子注入的带隙宽度 ,并且已经较为容易地用溅射方法制备。上电极和半导体层之间的晶格匹配可以降低电子在界面上的散射 ,对提高发射电流是很重要的 ,这已经在 Zn1 - x Mgx O/Au和 L i F/Au界面上实现。在绝缘层和半导体层之间引入界面态控制层可以大大降低驱动电压 ,对采用宽带隙半导体层的阴极尤其具有实用价值 Field-assisted electron emission cathodes with metal / insulation / semiconductor / metal structures are the main candidates in large screen displays. The electron emission is seriously affected by the thickness of the thin films, the material composition and the crystalline state of the layers. The upper electrode composed of Au / Ag double-layer thin film reduced the electron affinity by 0.5 eV, and the emission current increased several times. The semiconductor material Zn1-xMgxO has a low electron affinity and a band gap width suitable for electron injection, and has been relatively easily prepared by a sputtering method. Lattice matching between the upper electrode and the semiconductor layer can reduce the scattering of electrons at the interface and is important for increasing the emission current, which has been achieved at the Zn1 - xMgxO / Au and LiF / Au interfaces. The introduction of an interface state control layer between the insulating layer and the semiconductor layer can greatly reduce the driving voltage and is particularly useful for cathodes that employ wide bandgap semiconductor layers