用共蒸发法在室温下沉积了 Zn Te∶ Cu多晶薄膜 .刚沉积的不掺 Cu的薄膜呈立方相 ,适度掺 Cu时为立方相和六方相的混合相 .随着 Cu含量的增加 ,六方相增加 ,光能隙减小 .根据暗电导温度关系 ,结合 XRD和 DSC的结果 ,认为在 110℃、170℃开始出现类 Cu Te、类 Cu2 Te相以及 Cu0、Cu+离解的结果导致电导温度关系异常 ,应用这种薄膜作为背接触层获得了转换效率为 11.6 % ,面积为 0 .5 2 cm2 的 Cd S/Cd Te/Zn Te∶ Cu太阳电池 Co-evaporation method was used to deposit the Zn Te: Cu polycrystalline thin films at room temperature.The newly deposited undoped Cu films were cubic phases and the Cu-doped phase was the mixed phase of cubic phase and hexagonal phase.With the increase of Cu content, According to the results of XRD and DSC, it is considered that the dissociation of Cu-like Cu-like Cu2-like phase and Cu0 and Cu0 at 110 ℃ and 170 ℃ results in the decrease of the electrical conductivity temperature Relationship between the abnormal application of this film as the back contact layer obtained a conversion efficiency of 11.6%, an area of ​​0.52 cm2 of Cd S / Cd Te / Zn Te: Cu solar cells