本文介绍了以POCl_3为材料源作硅中磷扩散的系统研究工作。特别是确定了实现仅受磷在硅中溶解度限制的扩散在POCl_3-O_2-N_2系统中所需的炉况条件。在800～1200℃温度范围内所需的POCl_2蒸气压的最小浓度约为0.35%。在高温下氧浓度没有临界值,然而,低于1000℃时对于给定的POCl_3浓度,它就逐渐变成为临界的了。 This paper introduces the system research work of POCl_3 as the material source for the diffusion of silicon in silicon. In particular, the furnace conditions required to achieve diffusion limited in the POCl-3-O_2-N_2 system, which is limited only by the solubility of phosphorus in silicon, were determined. The minimum POCl 2 vapor pressure required for the 800-1200 ° C temperature range is about 0.35%. There is no critical oxygen concentration at high temperatures, however, below 1000 ° C it gradually becomes critical for a given POCl 3 concentration.