利用射频磁控反应溅射方法制备富硅的氮化硅薄膜。衬底材料为抛光的硅片,靶材为硅靶,在Ar-N2气环境下,通过改变两种气体的组分比来改变样品成分,并在高纯N2气氛下对其进行高温退火处理。用X射线光电子能谱(XPS)和X射线衍射(XRD)对样品进行了表征,并测试了样品的光致发光谱(PL)。实验结果表明:X射线光电子能谱中出现了Si—N键合结构,同时还有少量的Si—O键生成,通过计算得出Si/N比值约为1.51,制备出了富硅的氮化硅薄膜;薄膜未经退火前,在可见光区域没有观察到明显的光致发光峰,经过高温退火后,XRD中新出现的衍射峰证实了纳米硅团簇的生成,PL图谱中在可见光区域出现了光致发光峰的蓝移现象,结合XRD结果,用纳米晶的量子限域效应对上述现象进行了合理解释。 Silicon - rich silicon nitride films prepared by RF magnetron reactive sputtering. The substrate is a polished silicon wafer and the target is a silicon target. The composition of the sample is changed by changing the composition ratio of the two gases under Ar-N2 gas atmosphere and is annealed in a high-purity N2 atmosphere at a high temperature . The samples were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), and their photoluminescence (PL) spectra were tested. The experimental results show that the Si-N bonding structure appears in the X-ray photoelectron spectroscopy and a small amount of Si-O bonds are formed. The calculated Si / N ratio is about 1.51 and a Si-N-rich nitride Silicon thin film. Before the film was not annealed, no obvious photoluminescence peak was observed in the visible region. After high temperature annealing, new diffraction peaks in XRD confirmed the formation of nanostructured silicon clusters. The PL spectrum appeared in the visible region The blue shift phenomenon of photoluminescence peak was studied. The X-ray diffraction (XRD) and quantum confinement effect of nanocrystals were used to explain the above phenomena.