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一、引言千兆赫频带功率管的进展非常显著,最近终于出现了4千兆赫下输出5瓦、增益为4分贝的晶体管。几乎在同时,我们也报导了在4千兆赫下输出1瓦,增益为5分贝的FT1706型晶体管的研究工作。研究千兆赫频带功率晶体管时,需要解决的特殊问题是:(1)减小发射极陷落效应(简称EDE),(2)减小半导体管壳的寄生参量。其中,我们特别注重前者,由于减小了EDE,就得到在4千兆赫下输出1瓦的晶体管。同时,使用了进一步改进的减小公共端电感和输入输出端反馈电容的同轴管座。众所周知,如用磷做发射极掺杂,则将显著发生EDE,这样不仅不能减薄基区宽
I. INTRODUCTION The progress of the gigahertz frequency band power tube has been remarkable. Recently, transistors with a 4-dB gain of 4 watts were finally produced at 4 GHz. Almost at the same time, we also reported the work on the FT1706 transistor, which outputs 1 watt at 4 GHz with a gain of 5 dB. The special problems that need to be addressed when studying gigahertz band power transistors are: (1) reducing the emitter fall-off effect (EDE), and (2) reducing the parasitic capacitance of the semiconductor package. Among them, we pay special attention to the former, due to the reduction of EDE, we get the output of 1 watt transistors at 4 GHz. At the same time, the use of further improvements to reduce the common inductor and input-output feedback capacitor coaxial socket. As we all know, such as phosphorus emitter dope, it will significantly EDE, so not only can not reduce the base width