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根据改进后的三角势阱场近似 ,并考虑量子化效应 ,提出了一种基于物理的阈值电压解析模型 ,给出了MOSFET的阈值电压解析表达式 ,并与经典理论和数值模拟结果进行了比较 .
Based on the improved triangular potential well approximations and considering the quantization effect, a physics-based threshold voltage analysis model is proposed. The analytical expression of threshold voltage of MOSFET is given and compared with the classical theory and numerical simulation results .