采用涂层铝扩散基区工艺的低频大功率管集电结反向击穿特性,容易出现负阻现象.对发生负阻击穿时的芯片作表面观察,看到了与发射结击穿时完全一致的微等离子体发光区,从而确定了集电结负阻击穿特性是基区穿通引起的.适当调整基区的杂质浓度和分布,即可大大降低这种现象出现的可能性. The reverse breakdown behavior of collector junction of low frequency high power transistor with coated aluminum diffusion base process is prone to appear negative resistance phenomenon.For the chip with negative resistance breakdown, the surface of the chip is observed, and it is completely consistent with the firing junction Of the micro-plasma light-emitting area, and thus determine the collector junction negative resistance breakdown resistance is caused by the penetration of the base area. Proper adjustment of the base area of ​​the impurity concentration and distribution, you can greatly reduce the possibility of this phenomenon.